Enabling Performance Capabilities
• Pristine, stable, oxide free surfaces with optimum Hydrogen terminations • >48 hours of queue time with <0.1A SiO2 (by XPS measurement) • Terabit contamination levels using only dHF/UPW processes and “IPA free” drying • No silicon consumption by the H-terminating surface preparation process • Up to 40% particle removal efficiency (PRE) with dHF clean • UHP SiO2 Surface Passivation without RCA based chemistries
• Pristine, stable, oxide free surfaces with optimum Hydrogen terminations
• >48 hours of queue time with <0.1A SiO2 (by XPS measurement)
• Terabit contamination levels using only dHF/UPW processes and “IPA free” drying
• No silicon consumption by the H-terminating surface preparation process
• Up to 40% particle removal efficiency (PRE) with dHF clean
• UHP SiO2 Surface Passivation without RCA based chemistries
Extensive Process Applications:
Epitaxy Diffusion and Oxidation CVD and PVD ALD Pre Metal Deposition Implant Poly/Poly Stack Photomasking
Epitaxy